Vacuum channel electronic element, optical transmission circuit, and laminated chip

A vacuum channel electronic element, comprising:

• a semiconductor layer;
• a first laminated body wherein the first insulating layer that is insulating and formed on the semiconductor layer, a gate layer that is conductive and formed on the first insulating layer, and a second insulating layer that is insulating and formed on the gate layer are included, and wherein first side wall is exposed in a space defined by wall surfaces including the first side wall formed to include an end surface of the first insulating layer, an end surface, covered with an insulating film, of the gate layer, and an end surface of the second insulating layer;
• a second laminated body wherein a third insulating layer that is insulating and formed on the semiconductor layer and a drain layer that is conductive and formed on the third insulating layer are included, the wall surfaces include second side wall formed to include an end surface of the third insulating layer and an end surface of the drain layer, and the second side wall are exposed in the space;
• and
• a conductive layer that is conductive, formed of an n-type impurity diffusion layer formed in a partial region of a surface of p-type semiconductor, a p-type impurity diffusion layer formed in a partial region of a surface of an n-type semiconductor, a diffusion layer of a same type of conductivity as the semiconductor layer, or a metal layer formed in a partial region of a surface of a semiconductor in the semiconductor layer in the space, in contact with the first side wall in the space, has a lower resistivity than that of the semiconductor layer, and extending from the space beyond the first laminated body via a region other than the first laminated body and the second laminated body,
• wherein charge carriers in an induced inversion or accumulation layer of the semiconductor layer move into the conductive layer, the charge carriers are emitted into the space due to a Coulomb repulsive force between electrons, and the charge carriers travel to the drain layer in the space without flowing to the first side wall and the gate layer, by applying a predetermined voltage to the semiconductor layer, the conductive layer, the gate layer, and the drain layer;
• wherein the conductive layer extends beyond the first laminated body and the second laminated body from the space on the surface of the semiconductor layer.

A vacuum channel electronic element, comprising:

• a base layer that is insulating;
• a laminated body wherein a base insulating layer that is insulating and on the base layer, a semiconductor layer formed on the base insulating layer, a first insulating layer that is insulating and formed on the semiconductor layer, a gate layer that is conductive and formed on the first insulating layer, and a second insulating layer that is insulating and formed on the gate layer are included, and wherein first side walls formed to include an end surface of the base insulating layer, an end surface of the semiconductor layer, an end surface of the first insulating layer, and an end surface, covered with an insulating film, of the gate layer are exposed in a space;
• and
• a drain layer that is conductive and provided on the base layer with a surface exposed to the space, wherein a position of the surface of the drain layer is separated from an interface between the semiconductor layer and the base insulating layer toward a side of the base layer,
• wherein charge carriers in an induced inversion or accumulation layer of the semiconductor layer are emitted into the space due to a Coulomb repulsive force between electrons, and the charge carriers move to the drain layer in the space without flowing to the first side wall and the gate layer, by applying a predetermined voltage to the semiconductor layer, the gate layer and the drain layer;
• wherein the laminated body comprises a gap and the drain layer extends beyond the laminated body from the space through the gap.