Vacuum channel field effect transistor, producing method thereof, and semiconductor device

A vacuum channel field effect transistor comprising:

• a semiconductor substrate;
• a first insulator on the semiconductor substrate;
• a gate electrode on the first insulator;
• a second insulator on the gate electrode;
• a drain electrode on the second insulator;
• and
• an n-type impurity diffusion layer formed in a part of a surface of p-type semiconductor or a p-type impurity diffusion layer formed in a part of a surface of a n-type semiconductor in the semiconductor substrate, a surface of the n-type impurity diffusion layer or the p-type impurity diffusion layer being in contact with a contact point between a bottom of a side face of the first insulator and a surface of the semiconductor substrate and being capable of emitting charge carriers when a predetermined voltage is applied, wherein
• application of predetermined voltages to the semiconductor substrate, the n-type impurity diffusion layer or the p-type impurity diffusion layer, the gate electrode, and the drain electrode causes charge carriers in an inversion layer of the semiconductor substrate in contact with the first insulator to flow into the n-type impurity diffusion layer or the p-type impurity diffusion layer and to travel through a vacuum or air faced by a first side wall including the side face of the first insulator and a side face of the gate electrode to the drain electrode,
• wherein the second insulator is between the surface of the semiconductor substrate and a bottom face of the drain electrode and adjacent to a second side wall including a side face of the first insulator and a side face of the gate electrode not being in contact with the n-type impurity diffusion layer or the p-type impurity diffusion layer.

A semiconductor device comprising:

• a plurality of field effect transistors each including:
• a semiconductor substrate;
• a first insulator on the semiconductor substrate;
• a gate electrode on the first insulator;
• a second insulator on the gate electrode;
• a drain electrode on the second insulator;
• and
• an n-type impurity diffusion layer formed in a part of a surface of p-type semiconductor or a p-type impurity diffusion layer formed in a part of a surface of a n-type semiconductor in the semiconductor substrate, a surface of the n-type impurity diffusion layer or the p-type impurity diffusion layer being in contact with a contact point between a bottom of a side face of the first insulator and a surface of the semiconductor substrate and being capable of emitting charge carriers when a predetermined voltage is applied, wherein
• application of predetermined voltages to the semiconductor substrate, the n-type impurity diffusion layer or the p-type impurity diffusion layer, the gate electrode, and the drain electrode causes charge carriers in an inversion layer of the semiconductor substrate in contact with the first insulator to flow into the n-type impurity diffusion layer or the p-type impurity diffusion layer and to travel through a vacuum or air faced by a first side wall including the side face of the first insulator, a side face of the gate electrode, a side face of the second insulator, and a side face of the drain electrode to the drain electrode, and
• the field effect transistors include an n-type field effect transistor comprising the n-type impurity diffusion layer in which the charge carriers are electrons, and a p-type field effect transistor comprising the p-type impurity diffusion layer in which the charge carriers are holes.

A vacuum channel field effect transistor comprising:

• a semiconductor substrate;
• a source electrode formed in a rectangular shape on the semiconductor substrate in a direction perpendicular to a surface of the semiconductor substrate;
• a drain electrode formed in a rectangular shape in a direction perpendicular to the surface of the semiconductor substrate, the drain electrode facing the source electrode with a vacuum or air therebetween;
• and
• a gate electrode formed in a rectangular shape in a direction perpendicular to the surface of the semiconductor substrate, and facing the vacuum or air between the source electrode and the drain electrode, wherein
• application of predetermined voltages to the source electrode, the gate electrode, and the drain electrode causes charge carriers in the source electrode to travel through the vacuum or air to the drain electrode.