H01F 10/329
Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched
Official title: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect}
H01F10/329 (Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched) appears on 725 US grants and 788 published applications in this corpus.
Search patents in H01F- Granted patents
- 725
- Published applications
- 788
- Assignees
- 151
- Inventors
- 969
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 2 | 5 |
| 2005 | 4 | 7 |
| 2006 | 4 | 3 |
| 2007 | 4 | 9 |
| 2008 | 4 | 6 |
| 2009 | 6 | 10 |
| 2010 | 7 | 23 |
| 2011 | 18 | 16 |
| 2012 | 20 | 36 |
| 2013 | 28 | 24 |
| 2014 | 24 | 28 |
| 2015 | 29 | 30 |
| 2016 | 35 | 27 |
| 2017 | 31 | 24 |
| 2018 | 21 | 56 |
| 2019 | 90 | 127 |
| 2020 | 95 | 112 |
| 2021 | 81 | 81 |
| 2022 | 73 | 52 |
| 2023 | 55 | 37 |
| 2024 | 49 | 32 |
| 2025 | 34 | 30 |
| 2026 | 10 | 12 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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- Magnetization rotational element and magnetoresistive effect element19 May 2026US 12,635,420 B2TDK Corporation
- Magnetic sensor element, sensing device and sensing operation using the sensing device for sensing an external magnetic field with low-noise14 Apr 2026US 12,601,795 B2Allegro MicroSystems, LLC
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
- Memory device and manufacturing method thereof17 Sep 2026US 2026/0282759 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Physically unclonable function device and cryptographic key generation apparatus using the same3 Sep 2026US 2026/0260800 A1Korea University Research and Business Foundation
- Complement inhibition30 Jul 2026US 2026/0216175 A1Apellis Pharmaceuticals, Inc.
- A magnon-mediated spin torque switching device30 Jul 2026US 2026/0223601 A1National University of Singapore
Most cited
By later US patents
- Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element222US 7,224,601 B2Grandis, Inc. · 2007
- Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element213US 6,838,740 B2Grandis, Inc. · 2005
- Antiparallel magnetoresistive memory cells141US 6,777,730 B2NVE Corporation · 2004
- Magnetic memory element and nonvolatile memory device97US 8,716,817 B2Kabushiki Kaisha Toshiba · 2014
- Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device96US 6,950,335 B2Commissariat A L' Energie Atomique · 2005