Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device
AssigneeCommissariat a l'Energie Atomique
InventorsBernard Dieny, Olivier Redon
Life of this patent
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Abstract
Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The storage layer is heated (22, 24) above the blocking temperature of its magnetisation. A magnetic field (34) is applied (26) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.
Claims17
Magnetic device comprising a magnetic tunnel junction that comprises:
- a first magnetic layer forming a reference layer and having a magnetisation of fixed direction,
- a second magnetic layer forming a storage layer and having a magnetisation of variable direction, and
- a third layer that is semiconductive or electrically insulating and which separates the first layer from the second layer,
- wherein the blocking temperature of the magnetisation of the storage layer is lower than the blocking temperature of the magnetisation of the reference layer and in that the device further comprises:
- means for heating the storage layer to a temperature higher than the blocking temperature of the magnetisation of said storage layer, said means for heating the storage layer being means provided to make an electric current flow through the magnetic tunnel junction, and
- means for applying, to said storage layer, a magnetic field capable of orientating the magnetisation of said storage layer with respect to the magnetisation of the reference layer, without modifying the orientation of said reference layer.
Dependencies are inferred from the claim text.