H01F 10/3286
Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
Official title: {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy}
H01F10/3286 (Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy) appears on 900 US grants and 984 published applications in this corpus.
Search patents in H01F- Granted patents
- 900
- Published applications
- 984
- Assignees
- 200
- Inventors
- 1,144
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 3 |
| 2002 | 1 | 9 |
| 2003 | 10 | 8 |
| 2004 | 8 | 5 |
| 2005 | 9 | 13 |
| 2006 | 5 | 10 |
| 2007 | 5 | 15 |
| 2008 | 9 | 7 |
| 2009 | 8 | 19 |
| 2010 | 10 | 25 |
| 2011 | 22 | 43 |
| 2012 | 28 | 52 |
| 2013 | 53 | 53 |
| 2014 | 51 | 54 |
| 2015 | 51 | 45 |
| 2016 | 49 | 42 |
| 2017 | 45 | 32 |
| 2018 | 26 | 55 |
| 2019 | 87 | 129 |
| 2020 | 96 | 120 |
| 2021 | 87 | 76 |
| 2022 | 66 | 59 |
| 2023 | 59 | 39 |
| 2024 | 49 | 33 |
| 2025 | 35 | 27 |
| 2026 | 17 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Magnetic tunneling junction device and memory device including the same8 Sep 2026US 12,733,405 B2Samsung Electronics Co., Ltd.
- Magnetic storage device provided with magnetoresistive element1 Sep 2026US 12,725,632 B2National Institute of Advanced Industrial Science and Technology
- Magnetoresistive effect memory, memory array, and memory system25 Aug 2026US 12,718,857 B2Sony Semiconductor Solutions Corporation
- Perpendicular shape anisotropy design with asymmetric composite free layer18 Aug 2026US 12,713,835 B2Samsung Electronics Co., Ltd.
- Method of fabricating physically unclonable function (puf) device and method of generating random bits by using puf device8 Oct 2026US 2026/0310832 A1Hyundai Motor Company
- Magnetic memory cell based on stt-assisted sot writing comprising an n-type transistor and a p-type transistor as select transistors, and mram memory20 Aug 2026US 2026/0247870 A1Centre National De La Recherche Scientifique
- Magnetoresistive element having an out-of-plane sensitivity axis and having reduced hysteresis and increased working field range6 Aug 2026US 2026/0227465 A1Allegro MicroSystems, LLC
- Complement inhibition30 Jul 2026US 2026/0216175 A1Apellis Pharmaceuticals, Inc.
- A magnon-mediated spin torque switching device30 Jul 2026US 2026/0223601 A1National University of Singapore
Most cited
By later US patents
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device243US 6,532,164 B2Commissariat A L' Energie Atomique · 2003
- Perpendicular magnetization magnetic element utilizing spin transfer241US 6,967,863 B2Grandis, Inc. · 2005
- Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element213US 6,838,740 B2Grandis, Inc. · 2005
- High speed low power annular magnetic devices based on current induced spin-momentum transfer174US 7,307,876 B2New York University · 2007