Magnetic tunneling junction device and memory device including the same

A magnetic tunneling junction device comprising:

• a free layer having a first surface and a second surface opposite the first surface;
• a pinned layer facing the first surface of the free layer;
• a first oxide layer between the pinned layer and the free layer;
• a second oxide layer on the second surface of the free layer;
• and
• a capping metal layer in contact with the second oxide layer,
• wherein
• the free layer comprises a magnetic material doped with a non-magnetic metal, and
• the capping metal layer comprises a metal different from the non-magnetic metal of the free layer.

A memory device comprising:

• a plurality of memory cells each comprising a switching device connected to a magnetic tunneling junction device,
• wherein the magnetic tunneling junction device comprises,
• a free layer having a first surface and a second surface opposite the first surface,
• a pinned layer facing the first surface of the free layer,
• a first oxide layer between the pinned layer and the free layer,
• a second oxide layer on the second surface of the free layer, and
• a capping metal layer in contact with the second oxide layer,
• wherein
• the free layer comprises a magnetic material doped with a non-magnetic metal, and
• the capping metal layer comprises a metal different from the non-magnetic metal of the free layer.