H01F 10/3254
The spacer being semiconducting or insulating
Official title: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]}
H01F10/3254 (The spacer being semiconducting or insulating) appears on 1,799 US grants and 1,931 published applications in this corpus.
Search patents in H01F- Granted patents
- 1,799
- Published applications
- 1,931
- Assignees
- 331
- Inventors
- 2,074
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 5 | 0 |
| 1996 | 0 | 0 |
| 1997 | 5 | 0 |
| 1998 | 10 | 0 |
| 1999 | 8 | 0 |
| 2000 | 16 | 0 |
| 2001 | 23 | 13 |
| 2002 | 28 | 46 |
| 2003 | 39 | 45 |
| 2004 | 56 | 81 |
| 2005 | 56 | 80 |
| 2006 | 63 | 64 |
| 2007 | 54 | 82 |
| 2008 | 48 | 99 |
| 2009 | 59 | 90 |
| 2010 | 60 | 103 |
| 2011 | 95 | 88 |
| 2012 | 104 | 98 |
| 2013 | 111 | 74 |
| 2014 | 86 | 66 |
| 2015 | 65 | 44 |
| 2016 | 58 | 37 |
| 2017 | 34 | 36 |
| 2018 | 32 | 66 |
| 2019 | 93 | 146 |
| 2020 | 122 | 160 |
| 2021 | 129 | 133 |
| 2022 | 95 | 86 |
| 2023 | 86 | 65 |
| 2024 | 74 | 65 |
| 2025 | 61 | 46 |
| 2026 | 18 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Magnetic tunnel junction based molecular spintronics device and magnetic resonance sensors6 Oct 2026US 12,755,883 B2University of the District of Columbia
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized Heusler films6 Oct 2026US 12,757,640 B2Samsung Electronics Co., Ltd.
- Method to calculate performance of a magnetic element comprising a ferromagnetic layer exchange-coupled to an antiferromagnetic layer25 Aug 2026US 12,716,970 B2Allegro MicroSystems, LLC
- Free layer in magnetoresistive random-access memory18 Aug 2026US 12,713,839 B2International Business Machines Corporation
- Magnetic memory devices having a low switching voltage4 Aug 2026US 12,701,925 B2Northwestern University
- Memory device and manufacturing method thereof17 Sep 2026US 2026/0282759 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetoresistive element having an out-of-plane sensitivity axis and having reduced hysteresis and increased working field range6 Aug 2026US 2026/0227465 A1Allegro MicroSystems, LLC
- Complement inhibition30 Jul 2026US 2026/0216175 A1Apellis Pharmaceuticals, Inc.
- A magnon-mediated spin torque switching device30 Jul 2026US 2026/0223601 A1National University of Singapore
- Magnetoresistive effect element and magnetic memory device23 Jul 2026US 2026/0215162 A1
Most cited
By later US patents
- Magnetic device with optimized heat confinement1,021US 8,411,500 B2Crocus Technology SA · 2013
- Current-induced magnetic switching device and memory including the same272US 6,256,223 B1International Business Machines Corporation · 2001
- Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers255US 6,166,948 AInternational Business Machines Corporation · 2000
- Magnetic tunneling junction configuration and a method for making the same255US 6,897,532 B1Cypress Semiconductor Corporation · 2005
- Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device243US 6,532,164 B2Commissariat A L' Energie Atomique · 2003