Free layer in magnetoresistive random-access memory
AssigneeInternational Business Machines Corporation
InventorsMatthias Georg Gottwald, Guohan Hu, Virat Vasav Mehta, John Bruley, Alexander Reznicek
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AssigneeInternational Business Machines Corporation
InventorsMatthias Georg Gottwald, Guohan Hu, Virat Vasav Mehta, John Bruley, Alexander Reznicek
Estimating the term…
Embodiments of present invention provide a magnetoresistive random-access-memory (MRAM). The MRAM includes a reference layer; a tunnel barrier layer of magnesium-oxide (MgO); and a free layer, where the free layer includes a first cobalt-iron-boron (CoFeB) layer on top of the tunnel barrier layer; a spacer layer on top of the first CoFeB layer; a second CoFeB layer on top of the spacer layer; and a capping layer of MgO on top of the second CoFeB layer. Additionally, the first and the second CoFeB layer are substantially depleted of boron (B) to include respectively a first region adjacent to the tunnel barrier layer and the capping layer respectively and a second region adjacent to the spacer layer, where the first regions of the first and the second CoFeB layer include crystallized cobalt-iron (CoFe) and the second regions of the first and the second CoFeB layer include amorphous CoFe alloy.
A magnetoresistive random-access-memory (MRAM) comprising:
A magnetoresistive random-access-memory (MRAM) comprising:
A magnetic tunnel junction (MTJ) stack comprising:
Dependencies are inferred from the claim text.