G11C 2213/19
Memory cell comprising at least a nanowire and only two terminals
G11C2213/19 (Memory cell comprising at least a nanowire and only two terminals) appears on 57 US grants and 60 published applications in this corpus.
Search patents in G11C- Granted patents
- 57
- Published applications
- 60
- Assignees
- 12
- Inventors
- 62
- Latest grant
- 11 Feb 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 1 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 10 |
| 2009 | 1 | 6 |
| 2010 | 5 | 12 |
| 2011 | 10 | 4 |
| 2012 | 6 | 2 |
| 2013 | 5 | 3 |
| 2014 | 3 | 2 |
| 2015 | 5 | 1 |
| 2016 | 3 | 4 |
| 2017 | 3 | 2 |
| 2018 | 3 | 2 |
| 2019 | 3 | 4 |
| 2020 | 3 | 4 |
| 2021 | 4 | 2 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 1 | 0 |
By publication year.
Recent patents
- Systems and methods for efficient matrix multiplication11 Feb 2025US 12,223,009 B2Rain Neuromorphics Inc.
- Memristive device and method based on ion migration over one or more nanowires23 May 2023US 11,657,871 B2AT&T Intellectual Property I, L. P.
- Nonvolatile nanotube switch elements using sidewall contacts16 Nov 2021US 11,177,261 B2Nantero, Inc.
- Memristive device and method based on ion migration over one or more nanowires24 Aug 2021US 11,100,982 B2AT&T Intellectual Property I, L. P.
- Systems and methods for efficient matrix multiplication27 Apr 2021US 10,990,651 B2Rain Neuromorphics Inc.
- Memristive device and method based on ion migration over one or more nanowires4 Nov 2021US 2021/0343339 A1AT&T Intellectual Property I, L. P.
- Systems and methods for efficient matrix multiplication15 Jul 2021US 2021/0216610 A1Rain Neuromorphics Inc.
- Memristive device and method based on ion migration over one or more nanowires22 Oct 2020US 2020/0335161 A1AT&T Intellectual Property I, L. P.
- Nonvolatile Nanotube Switch Elements Using Sidewall Contacts21 May 2020US 2020/0161304 A1Nantero, Inc.
- Memristive device and method based on ion migration over one or more nanowires16 Apr 2020US 2020/0118623 A1AT&T Intellectual Property I, L. P.
Most cited
By later US patents
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks121US 7,835,170 B2Nantero, Inc. · 2010
- Cross point memory cell with distributed diodes and method of making same100US 7,733,685 B2SanDisk 3D LLC · 2010
- Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same92US 8,183,665 B2Nantero, Inc. · 2012
- Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same91US 8,217,490 B2Nantero, Inc. · 2012