Memristive device and method based on ion migration over one or more nanowires

A device, comprising:

• a processing system including a processor;
• and
• a memory that stores executable instructions that, when executed by the processing system, facilitate performance of operations, the operations comprising:
• applying a first setting voltage across a first electrode and a second electrode, a first nanowire with a first electrical resistance being electrically connected between the first electrode and the second electrode, a second nanowire being disposed adjacent to the first nanowire, the second nanowire being disposed substantially parallel to the first nanowire, a gap being formed between the first nanowire and the second nanowire, a migration of ions from one or more of the first electrode and the second electrode to a surface of the first nanowire being caused by the applying of the first setting voltage, the second nanowire being configured to force at least some of the ions to settle in a potential well at a location along the first nanowire, the migration of ions causing a reduction of electrical resistance of the first nanowire from the first electrical resistance, and the reduction of the electrical resistance of the first nanowire causing entry into a first memory state of a memory device comprising the first nanowire and the second nanowire;
• and
• applying, across the first electrode and the second electrode, a first reading voltage, the first reading voltage being less than the first setting voltage, the first reading voltage being sufficiently small such that the applying of the first reading voltage causes a change of the electrical resistance of the first nanowire while still maintaining the first memory state.

A non-transitory machine-readable storage medium comprising executable instructions that, when executed by a processing system including a processor, perform operations, the operations comprising:

• applying a setting voltage across a pair of electrodes comprising a first electrode and a second electrode, a first nanowire having a first electrical resistance being electrically connected between the first electrode and the second electrode, a second nanowire being disposed adjacent to the first nanowire to form a gap between the first nanowire and the second nanowire, the second nanowire being disposed substantially parallel to the first nanowire, a migration of ions from one or more of the first electrode and the second electrode to a surface of the first nanowire being caused by the applying of the setting voltage, the second nanowire being configured to force at least some of the ions to settle in a potential well at a location along the first nanowire, the migration of ions causing a reduction of electrical resistance of the first nanowire from the first electrical resistance, and the reduction of the electrical resistance of the first nanowire causing entry into a first memory state of a device comprising the first nanowire and the second nanowire;
• and
• applying a reading voltage across the first electrode and the second electrode, the reading voltage being less than the setting voltage, the reading voltage being sufficiently small such that the applying of the reading voltage causes a change of the electrical resistance of the first nanowire while still maintaining the first memory state.