G11C 2211/5624
Concurrent multilevel programming and programming verification
G11C2211/5624 (Concurrent multilevel programming and programming verification) appears on 83 US grants and 57 published applications in this corpus.
Search patents in G11C- Granted patents
- 83
- Published applications
- 57
- Assignees
- 36
- Inventors
- 109
- Latest grant
- 11 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 6 | 0 |
| 1999 | 10 | 0 |
| 2000 | 5 | 0 |
| 2001 | 4 | 1 |
| 2002 | 2 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 2 |
| 2006 | 3 | 2 |
| 2007 | 0 | 2 |
| 2008 | 3 | 1 |
| 2009 | 2 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 2 |
| 2012 | 3 | 3 |
| 2013 | 2 | 2 |
| 2014 | 1 | 6 |
| 2015 | 3 | 2 |
| 2016 | 4 | 5 |
| 2017 | 3 | 2 |
| 2018 | 2 | 0 |
| 2019 | 1 | 1 |
| 2020 | 3 | 9 |
| 2021 | 4 | 4 |
| 2022 | 7 | 4 |
| 2023 | 2 | 2 |
| 2024 | 3 | 4 |
| 2025 | 5 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Nonvolatile memory device, operation method of a nonvolatile memory device, and operation method of a controller11 Nov 2025US 12,469,552 B2Samsung Electronics Co., Ltd.
- Adjustment of program verify targets corresponding to a last programming distribution and a programming distribution adjacent to an initial programming distribution23 Sep 2025US 12,424,288 B2Micron Technology, Inc.
- Non-volatile memory with lower current program-verify12 Aug 2025US 12,387,802 B2SanDisk Technologies LLC
- Skip program verify for dynamic start voltage sampling7 Jan 2025US 12,189,955 B2Intel NDTM US LLC
- Plane level dedicated starting program voltage to reduce program time for multi-plane concurrent program operation7 Jan 2025US 12,190,969 B2SanDisk Technologies LLC
- Adjustment of program verify targets corresponding to a last programming distribution and a programming distribution adjacent to an initial programming distribution31 Jul 2025US 2025/0246252 A1Micron Technology, Inc.
- Adjustment of program verify targets corresponding to a last programming distribution and a programming distribution adjacent to an initial programming distribution3 Oct 2024US 2024/0331780 A1Micron Technology, Inc.
- Non-volatile memory with lower current program-verify11 Jul 2024US 2024/0233841 A9SanDisk Technologies LLC
- Non-volatile memory with lower current program-verify25 Apr 2024US 2024/0136001 A1SanDisk Technologies LLC
- Plane level dedicated starting program voltage to reduce program time for multi-plane concurrent program operation29 Feb 2024US 2024/0071525 A1SanDisk Technologies LLC
Most cited
By later US patents
- Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells221US 5,712,815 AAdvanced Micro Devices, Inc. · 1998
- Charge packet metering for coarse/fine programming of non-volatile memory191US 7,068,539 B2SanDisk Corporation · 2006
- Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell170US 5,687,114 AAgate Semiconductor, Inc. · 1997
- Highly compact memory device with nonvolatile vertical transistor memory cell155US 5,739,567 A1998
- Nonvolatile semiconductor memory device145US 6,243,290 B1Hitachi Device Engineering Co., Ltd. · 2001