G11C 2207/061
Sense amplifier enabled by a address transition detection related control signal
G11C2207/061 (Sense amplifier enabled by a address transition detection related control signal) appears on 22 US grants and 14 published applications in this corpus.
Search patents in G11C- Granted patents
- 22
- Published applications
- 14
- Assignees
- 17
- Inventors
- 36
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 2 | 1 |
| 2006 | 0 | 0 |
| 2007 | 3 | 4 |
| 2008 | 1 | 2 |
| 2009 | 2 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 1 | 1 |
| 2019 | 1 | 0 |
| 2020 | 0 | 1 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 0 | 1 |
| 2024 | 1 | 0 |
| 2025 | 0 | 0 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Data storage circuit and control method thereof, and storage apparatus5 May 2026US 12,620,422 B2Changxin Memory Technologies, Inc.
- Apparatuses and methods for decoding addresses for memory9 Jan 2024US 11,869,592 B2
- Apparatuses and methods for decoding addresses for memory8 Jun 2021US 11,031,083 B2Micron Technology, Inc.
- Sensing amplifier comprising bias circuitry coupled to bit line and dummy bitline for performing read operation in flash memory devices19 Mar 2019US 10,236,068 B2Silicon Storage Technology, Inc.
- Sensing amplifier comprising a built-in sensing offset for flash memory devices6 Mar 2018US 9,911,501 B2Silicon Storage Technology, Inc.
- Data storage circuit and control method thereof, and storage apparatus9 Jul 2026US 2026/0196255 A1Changxin Memory Technologies, Inc.
- Data storage circuit and control method thereof, and storage apparatus8 Jun 2023US 2023/0178119 A1Changxin Memory Technologies, Inc.
- Apparatuses and methods for decoding addresses for memory23 Sep 2021US 2021/0295917 A1Micron Technology, Inc.
- Apparatuses and methods for decoding addresses for memory16 Jul 2020US 2020/0227118 A1Micron Technology, Inc.
- Sensing Amplifier Comprising Voltage Offset Circuitry For Use In Flash Memory Devices24 May 2018US 2018/0144804 A1Silicon Storage Technology, Inc.
Most cited
By later US patents
- Memory transistor gate oxide stress release and improved reliability61US 7,269,047 B1Kilopass Technology, Inc. · 2007
- Methods and apparatus for measuring current as in sensing a memory cell58US 6,795,359 B1Micron Technology, Inc. · 2004
- Method and apparatus for measuring current as in sensing a memory cell44US 6,930,942 B2Micron Technology, Inc. · 2005
- Random access semiconductor memory device using MOS transistors34US 4,417,328 ATokyo Shibaura Denki Kabushiki Kaisha · 1983
- Time delay circuit for a semiconductor device27US 4,800,304 AFujitsu Limited · 1989