G11C 19/005
Digital stores in which the information is moved stepwise: with ferro-electric elements
Official title: {with ferro-electric elements (condensers)}
G11C19/005 (Digital stores in which the information is moved stepwise: with ferro-electric elements) appears on 12 US grants and 11 published applications in this corpus.
Search patents in G11C- Granted patents
- 12
- Published applications
- 11
- Assignees
- 9
- Inventors
- 29
- Latest grant
- 10 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 2 |
| 2005 | 2 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 2 |
| 2012 | 0 | 0 |
| 2013 | 1 | 1 |
| 2014 | 0 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 0 |
| 2017 | 1 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 1 |
| 2024 | 1 | 1 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Register, flop, and latch designs inlcuding ferroelectric and linear dielectrics10 Jun 2025US 12,327,580 B2Advanced Micro Devices, Inc.
- Capacitor, method of controlling the same, and transistor including the same7 May 2024US 11,980,023 B2Samsung Electronics Co., Ltd.
- Capacitor, method of controlling the same, and transistor including the same19 Sep 2023US 11,765,887 B2Samsung Electronics Co., Ltd.
- Fast magnetoelectric device based on current-driven domain wall propagation26 Feb 2019US 10,217,522 B2Regents of the University of Minnesota
- Shift register memory device, shift register, and data storage method17 Jan 2017US 9,548,132 B2Kabushiki Kaisha Toshiba
- Register, flop, and latch designs inlcuding ferroelectric and linear dielectrics14 Mar 2024US 2024/0087631 A1Advanced Micro Devices, Inc.
- Capacitor, method of controlling the same, and transistor including the same5 Oct 2023US 2023/0320078 A1Samsung Electronics Co., Ltd.
- Capacitor, method of controlling the same, and transistor including the same18 Nov 2021US 2021/0358694 A1Samsung Electronics Co., Ltd.
- Fast magnetoelectric device based on current-driven domain wall propagation23 Nov 2017US 2017/0337983 A1Regents of the University of Minnesota
- Shift register memory device, shift register, and data storage method29 Oct 2015US 2015/0310928 A1Kabushiki Kaisha Toshiba
Most cited
By later US patents
- Ferroelectric non-volatile logic elements435US 6,894,549 B2Ramtron International Corporation · 2005
- Electrodes for a device operating by electrically controlled fluid displacement106US 4,569,575 AThomson-CSF · 1986
- Fast magnetoelectric device based on current-driven domain wall propagation90US 10,217,522 B2Regents of the University of Minnesota · 2019
- Sequential circuits using ferroelectrics and semiconductor devices using the same54US 6,314,016 B1Rohm Co., Ltd. · 2001
- Nonvolatile data storage circuit using ferroelectric capacitors16US 6,934,178 B2Fujitsu Limited · 2005