Capacitor, method of controlling the same, and transistor including the same

A method of controlling a capacitor comprising a first electrode on a substrate, a second electrode spaced apart from the first electrode such that the first electrode is between the second electrode and the substrate, and an insulating structure including a ferroelectric film and a dielectric film between the first electrode and the second electrode, the ferroelectric film having a first impedance and the dielectric film having a second impedance, the method comprising:

• controlling an impedance of the ferroelectric film and an impedance of the dielectric film such that a control voltage applied between the first electrode and the second electrode is substantially equal to a capacitance boosting operating voltage,
• wherein the capacitance boosting operating voltage is determined by the following equation:
• V
• MAX
• =
• (
• 1
• +
• ❘
• "\[LeftBracketingBar]"
• Z
• 2
• ❘
• "\[RightBracketingBar]"
• ❘
• "\[LeftBracketingBar]"
• Z
• 1
• ❘
• "\[RightBracketingBar]"
• )
• ⁢
• t
• F
• ⁢
• E
• F
• ⁢
• M
• where VMAX is the capacitance boosting operating voltage, Z1 is the impedance of the ferroelectric film, Z2 is the impedance of the dielectric film, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximum polarization change.