G01N 2223/602
Crystal growth
Official title: crystal growth
G01N2223/602 (Crystal growth) appears on 32 US grants and 39 published applications in this corpus.
Search patents in G01N- Granted patents
- 32
- Published applications
- 39
- Assignees
- 31
- Inventors
- 101
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 2 |
| 2007 | 0 | 0 |
| 2008 | 1 | 2 |
| 2009 | 0 | 1 |
| 2010 | 1 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 2 |
| 2014 | 1 | 2 |
| 2015 | 0 | 1 |
| 2016 | 1 | 3 |
| 2017 | 2 | 1 |
| 2018 | 2 | 1 |
| 2019 | 2 | 2 |
| 2020 | 3 | 3 |
| 2021 | 1 | 3 |
| 2022 | 1 | 5 |
| 2023 | 3 | 1 |
| 2024 | 6 | 8 |
| 2025 | 3 | 1 |
| 2026 | 3 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Bonding wire for semiconductor devices8 Sep 2026US 12,733,530 B2Nippon Micrometal Corporation
- Bonding wire for semiconductor devices25 Aug 2026US 12,721,208 B2Nippon Micrometal Corporation
- Methods for polymorphic screening27 Jan 2026US 12,534,827 B2Universite de Montreal
- Serial synchrotron crystallography sample holding system7 Oct 2025US 12,436,116 B2MiTeGen, LLC
- Method for quantitatively characterizing dendrite segregation and dendrite spacing of high-temperature alloy ingot10 Jun 2025US 12,326,434 B2NCS Testing Technology CO., LTD
- Optical monitoring device7 Aug 2025US 2025/0251338 A1Samsung Electronics Co., Ltd.
- Method of analyzing crystal structure, crystal morphology, or crystal distribution of rubber material in stretching31 Oct 2024US 2024/0361260 A1Sumitomo Rubber Industries, Ltd.
- Serial synchrotron crystallography sample holding system3 Oct 2024US 2024/0328969 A1MiTeGen, LLC
- Serial synchrotron crystallography sample holding system26 Sep 2024US 2024/0319120 A1MiTeGen, LLC
- Bonding wire for semiconductor devices5 Sep 2024US 2024/0297142 A1Nippon Micrometal Corporation
Most cited
By later US patents
- Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same28US 7,416,604 B2Sumitomo Electric Industries, Ltd. · 2008
- Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same10US 7,854,804 B2Sumitomo Electric Industries, Ltd. · 2010
- 3D printed microfluidic mixers and nozzles for crystallography7US 10,557,807 B2Arizona Board of Regents on behalf of Arizona State University · 2020
- Continuous lattice constant measurments and apparatus therefor within a heat furnace5US 5,046,077 AU. S. Philips Corporation · 1991
- Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same5US 8,192,543 B2Sumitomo Electric Industries, Ltd. · 2012