C30B 9/10
Metal solvents
C30B9/10 (Metal solvents) appears on 114 US grants and 160 published applications in this corpus.
Search patents in C30B- Granted patents
- 114
- Published applications
- 160
- Assignees
- 51
- Inventors
- 197
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 3 |
| 2007 | 1 | 11 |
| 2008 | 4 | 7 |
| 2009 | 3 | 9 |
| 2010 | 8 | 14 |
| 2011 | 7 | 13 |
| 2012 | 7 | 10 |
| 2013 | 11 | 12 |
| 2014 | 8 | 11 |
| 2015 | 12 | 13 |
| 2016 | 4 | 14 |
| 2017 | 8 | 8 |
| 2018 | 15 | 6 |
| 2019 | 8 | 3 |
| 2020 | 4 | 7 |
| 2021 | 3 | 0 |
| 2022 | 3 | 2 |
| 2023 | 3 | 7 |
| 2024 | 1 | 4 |
| 2025 | 1 | 1 |
| 2026 | 3 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Synthetic single crystal diamond and method for producing same8 Sep 2026US 12,729,456 B2Sumitomo Electric Industries, Ltd.
- Synthetic diamond from a levitating supersaturated solvent at low pressure: process, apparatus, and material25 Aug 2026US 12,716,147 B2Cosmic Diamonds LLC
- Synthetic single crystal diamond and method for manufacturing same21 Apr 2026US 12,606,931 B2Sumitomo Electric Industries, Ltd.
- Synthetic single crystal diamond, tool including the same and method of producing synthetic single crystal diamond25 Mar 2025US 12,258,677 B2Sumitomo Electric Industries, Ltd.
- Group-III element nitride semiconductor substrate2 Jan 2024US 11,862,689 B2NGK Insulators, Ltd.
- Synthetic single crystal diamond, method of producing synthetic single crystal diamond, and infrared optical component17 Sep 2026US 2026/0275569 A1Sumitomo Electric Industries, Ltd.
- Synthetic single-crystal diamond, method of manufacturing synthetic single-crystal diamond, and diamond substrate13 Aug 2026US 2026/0234834 A1Sumitomo Electric Industries, Ltd.
- Synthetic single crystal diamond30 Jul 2026US 2026/0217540 A1Sumitomo Electric Industries, Ltd.
- Group iii nitride single crystal growth method14 May 2026US 2026/0132539 A1Toyoda Gosei Co., Ltd.
- Group iii element nitride substrate and production method for group iii element nitride substrate2 Oct 2025US 2025/0305183 A1NGK Insulators, Ltd.
Most cited
By later US patents
- System and method for diamond deposition using a liquid-solvent carbon-transfer mechanism10US 7,547,358 B12009
- Method for purifying silicon7US 7,727,503 B26N Silicon Inc. · 2010
- Method for purifying silicon7US 7,883,680 B26N Silicon Inc. · 2011
- Method for producing compound single crystal and production apparatus for use therein6US 7,435,295 B2Matsushita Electric Industrial Co., Ltd. · 2008
- Method for processing silicon powder to obtain silicon crystals6US 7,959,730 B26N Silicon Inc. · 2011