Group-III element nitride semiconductor substrate
AssigneeNGK Insulators, Ltd.
InventorsKatsuhiro Imai, Masahiro Sakai, Hiroki Kobayashi
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Abstract
Group-III element nitride semiconductor substrate including a first surface and a second surface that are easy to visually distinguish from each other. An end portion is easily detected with an optical sensor, a large effective area (area that can be used in device production) can be secured, and warping of the entirety of the substrate is reduced. A Group-III element nitride semiconductor substrate includes a first surface; and a second surface, wherein the first surface is a mirror surface, the second surface has a second-surface central region and a second-surface outer peripheral region, the second-surface central region is a mirror surface, and the second-surface outer peripheral region is a non-mirror surface.
Claims9
A Group-III element nitride semiconductor substrate, comprising:
- a first surface;
- and
- a second surface,
- wherein the first surface is a minor surface,
- wherein the second surface has a second-surface central region and a second-surface outer peripheral region,
- wherein the second-surface central region is a minor surface,
- wherein the second-surface outer peripheral region is a non-mirror surface, and
- wherein the first surface has a surface roughness Ra of 1 nm or less,
- wherein the second-surface outer peripheral region has a width of 1 mm or less.
Dependencies are inferred from the claim text.