C30B 11/02
Without using solvents
Official title: without using solvents (C30B11/06 takes precedence)
C30B11/02 (Without using solvents) appears on 75 US grants and 108 published applications in this corpus.
Search patents in C30B- Granted patents
- 75
- Published applications
- 108
- Assignees
- 86
- Inventors
- 300
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 6 |
| 2011 | 0 | 4 |
| 2012 | 1 | 1 |
| 2013 | 8 | 12 |
| 2014 | 3 | 5 |
| 2015 | 6 | 13 |
| 2016 | 6 | 9 |
| 2017 | 4 | 12 |
| 2018 | 8 | 4 |
| 2019 | 5 | 4 |
| 2020 | 3 | 7 |
| 2021 | 4 | 6 |
| 2022 | 5 | 8 |
| 2023 | 4 | 6 |
| 2024 | 9 | 4 |
| 2025 | 5 | 0 |
| 2026 | 2 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semi-insulating gallium arsenide single-crystal substrate, substrate with epitaxial layer, and method for manufacturing semi-insulating gallium arsenide single-crystal22 Sep 2026US 12,742,259 B2Sumitomo Electric Industries, Ltd.
- Method for preparing a P-type ZrCoSb-based half-Heusler single crystal alloy with a chemical composition of ZrCoSb1-xSnx by vertical bridgman directional crystallization7 Apr 2026US 12,595,583 B2Dalian University of Technology
- Mg2Si single crystal, Mg2Si single crystal substrate, infrared light receiving element and method for producing Mg2Si single crystal21 Oct 2025US 12,448,704 B2Ibaraki University
- Germanium single-crystal wafer, method for preparing germanium single-crystal wafer, method for preparing crystal bar, and use of single-crystal wafer17 Jun 2025US 12,336,319 B2Beijing Tongmei Xtal Technology Co., Ltd.
- Oxygen- and fluorine-doped cesium and rubidium lead perovskite compounds for hard radiation detection27 May 2025US 12,313,796 B2Northwestern University
- Apparatus and Method for Growing Multiple Crystals in a Single Furnace8 Oct 2026US 2026/0308799 A1Zhejiang University of Science and Technology
- Gallium arsenide single crystal substrate, method of producing gallium arsenide single crystal, and method of producing gallium arsenide single crystal substrate20 Aug 2026US 2026/0242979 A1Sumitomo Electric Industries, Ltd.
- Beta-digallium trioxide single crystal substrate, method for manufacturing beta-digallium trioxide single crystal, and method for manufacturing beta-digallium trioxide single crystal substrate13 Aug 2026US 2026/0234833 A1Sumitomo Electric Industries, Ltd.
- Semi-insulating gallium arsenide single-crystal substrate, substrate with epitaxial layer, and method for manufacturing semi-insulating gallium arsenide single-crystal9 Jul 2026US 2026/0193811 A1Sumitomo Electric Industries, Ltd.
- Method for growing single crystal, method for producing semiconductor substrate, and semiconductor substrate14 May 2026US 2026/0132543 A1Novel Crystal Technology, Inc.
Most cited
By later US patents
- Fabrication of a scintillator material of elpasolite type19US 9,599,727 B2Saint-Gobain Cristaux Et Detecteurs · 2017
- Methods and apparati for making thin semi-conductor wafers with locally controlled regions that are relatively thicker than other regions and such wafers7US 10,072,351 B21366 Technologies, Inc. · 2018
- Infrared light-excited light-emitting substance6US 5,439,616 AMitsubishi Materials Corporation · 1995
- Methods and apparatuses for manufacturing cast silicon from seed crystals5US 8,440,157 B2AMG IdealCast Solar Corporation · 2013
- Directional solidification furnace for reducing melt contamination and reducing wafer contamination2US 8,317,920 B2MEMC Singapore Pte. Ltd. · 2012