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US 12,448,704 B2Granted
Mg2Si single crystal, Mg2Si single crystal substrate, infrared light receiving element and method for producing Mg2Si single crystal
AssigneesJX Advanced Metals Corporation, Ibaraki University
InventorHaruhiko Udono
Life of this patent
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Abstract
Provided is a Mg2Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.
Claims6
A Mg2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°, and
- the single crystal comprises at least one of B, Li, Al, P, and As as a dopant.
Dependencies are inferred from the claim text.