Germanium single-crystal wafer, method for preparing germanium single-crystal wafer, method for preparing crystal bar, and use of single-crystal wafer

A method for preparing a monocrystalline germanium wafer, comprising:

• 1) Slicing, from a monocrystalline germanium ingot containing silicon, boron and gallium, an initial monocrystalline germanium wafer, wherein the initial germanium monocrystalline wafer contains silicon in an atomic concentration of from 3×1014 atoms/cc to 10×1018 atoms/cc, boron in an atomic concentration of from 1×1016 atoms/cc to 10×1018 atoms/cc, and gallium in an atomic concentration of from 1×1016 atoms/cc to 10×1019 atoms/cc, and wherein the monocrystalline germanium wafer has a ratio of the atomic concentration of boron to that of gallium in the range of from 8:1 to 1:240
• 2) grinding the edges of the initial monocrystalline germanium wafer obtained in step 1);
• 3) subjecting the initial monocrystalline germanium wafer ground in step 2) to a surface treatment;
• and
• 4) Subjecting the initial monocrystalline germanium wafer surface-treated in step 3) to rough polishing and then to finish polishing to obtain a monocrystalline germanium wafer product.

A method for preparing a monocrystalline germanium ingot, comprising:

• 1) Charging a first raw germanium material, dopant elements including silicon, boron and gallium, into a crucible that has been pre-loaded with a seed crystal of high-purity monocrystalline Ge in a seed well;
• 2) Charging a second raw germanium material for supplementing the first raw germanium material into a loading container;
• 3) Placing the crucible described in step 1) and the loading container described in step 2) in a quartz tube, and sealing the quartz tube under vacuum;
• 4) Placing the sealed quartz tube with the crucible and the loading container described in step 3) into a crystal growth furnace having a movable support that supports the quartz tube;
• 5) Melting the first and second raw germanium materials to a first and second melt respectively, and then adding all the melted second raw germanium material contained in the loading container, into the crucible;
• 6) Cooling the melt in the crucible obtained in step 5) with a controlled temperature gradient and a controlled cooling rate, so that the melt crystallizes when in contact with the seed crystal and forms a monocrystalline germanium ingot;
• and
• 7) Cooling the monocrystalline germanium ingot;
• wherein the silicon, boron and gallium added as dopant elements in step 1) are in such amounts that the resulting monocrystalline germanium ingot contains, within an effective length, silicon in an atomic concentration of from 3×1014 atoms/cc to 10×1018 atoms/cc, boron in an atomic concentration of from 1×1016 atoms/cc to 10×1018 atoms/cc, and gallium in an atomic concentration of from 1×1016 atoms/cc to 10×1019 atoms/cc, and wherein the monocrystalline germanium wafer has a ratio of the atomic concentration of boron to that of gallium in the range of from 8:1 to 1:240.