C30B 11/003
Heating or cooling of the melt or the crystallised material
Official title: {Heating or cooling of the melt or the crystallised material}
C30B11/003 (Heating or cooling of the melt or the crystallised material) appears on 347 US grants and 397 published applications in this corpus.
Search patents in C30B- Granted patents
- 347
- Published applications
- 397
- Assignees
- 250
- Inventors
- 878
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 5 | 0 |
| 1986 | 3 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 6 | 0 |
| 1990 | 10 | 0 |
| 1991 | 6 | 0 |
| 1992 | 5 | 0 |
| 1993 | 5 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 5 | 1 |
| 2002 | 6 | 3 |
| 2003 | 8 | 10 |
| 2004 | 6 | 3 |
| 2005 | 2 | 2 |
| 2006 | 5 | 7 |
| 2007 | 2 | 14 |
| 2008 | 3 | 12 |
| 2009 | 4 | 24 |
| 2010 | 7 | 25 |
| 2011 | 10 | 33 |
| 2012 | 13 | 27 |
| 2013 | 17 | 31 |
| 2014 | 17 | 23 |
| 2015 | 17 | 31 |
| 2016 | 25 | 20 |
| 2017 | 22 | 19 |
| 2018 | 20 | 9 |
| 2019 | 9 | 15 |
| 2020 | 14 | 17 |
| 2021 | 10 | 18 |
| 2022 | 9 | 14 |
| 2023 | 13 | 11 |
| 2024 | 12 | 7 |
| 2025 | 6 | 11 |
| 2026 | 4 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for preparing cremation crystals using catalyst obtained through reduction of phosphorus in skeletal remains29 Sep 2026US 12,747,514 B2
- Low etch pit density, low slip line density, and low strain indium phosphide15 Sep 2026US 12,735,808 B2AXT, Inc.
- Single crystal growth apparatus4 Aug 2026US 12,698,569 B2Novel Crystal Technology, Inc.
- Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion14 Apr 2026US 12,601,086 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Method and system for vertical gradient freeze 8 inch gallium arsenide substrates26 Aug 2025US 12,398,486 B2AXT, Inc.
- Apparatus and Method for Growing Multiple Crystals in a Single Furnace8 Oct 2026US 2026/0308799 A1Zhejiang University of Science and Technology
- Semi-insulating gallium arsenide single-crystal substrate, substrate with epitaxial layer, and method for manufacturing semi-insulating gallium arsenide single-crystal9 Jul 2026US 2026/0193811 A1Sumitomo Electric Industries, Ltd.
- Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant28 May 2026US 2026/0146367 A1AXT, Inc.
- Beta-Cesium Cadmium Silicon Sulfide Compound, Beta-Cs2CdSi4S10 Nonlinear Optical Crystal and Preparation Methods and Applications Thereof21 May 2026US 2026/0139409 A1Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences
- Gallium arsenide single crystal substrate and method of producing same14 May 2026US 2026/0132546 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Pressurized skull crucible for crystal growth using the Czochralski technique95US 5,863,326 ACermet, Inc. · 1999
- Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles59US 6,706,959 B2Clean Venture 21 Corporation · 2004
- Crystal growth apparatus and process54US 5,169,486 ABestal Corporation · 1992
- Apparatus and method for growth of large single crystals in plate/slab form47US 5,116,456 ASolon Technologies, Inc. · 1992
- Method of producing single-crystal silicon film39US 4,599,133 AHitachi, Ltd. · 1986