Y10T 117/1084
Having details of a stabilizing feature
Official title: having details of a stabilizing feature
Y10T117/1084 (Having details of a stabilizing feature) appears on 44 US grants and 8 published applications in this corpus.
Search patents in Y10T- Granted patents
- 44
- Published applications
- 8
- Assignees
- 24
- Inventors
- 66
- Latest grant
- 6 May 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 0 |
| 2002 | 1 | 0 |
| 2003 | 1 | 2 |
| 2004 | 1 | 0 |
| 2005 | 1 | 1 |
| 2006 | 0 | 1 |
| 2007 | 1 | 1 |
| 2008 | 2 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 2 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Doping apparatus for simultaneously injecting two dopants into a semiconductor melt at different positions and method for manufacturing silicon single crystal using the doping apparatus6 May 2014US 8,715,416 B2Sumco Techxiv Corporation
- Method and device for producting monocrystals16 Dec 2008US 7,465,355 B2Centre National De La Recherche Scientifique
- Rotationally-vibrated unidirectional solidification crystal growth system and its method18 Mar 2008US 7,344,598 B2National Taiwan University
- Powder metallurgy crucible for aluminum nitride crystal growth1 May 2007US 7,211,146 B2Crystal IS, Inc.
- Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals13 Sep 2005US 6,942,730 B2H. C. Materials Corporation
- Method and apparatus for producing a single crystal6 May 2010US 2010/0107968 A1Topsil Simiconductor Materials A/S
- Doping apparatus and method for manufacturing silicon single crystal11 Feb 2010US 2010/0031871 A1Sumco Techxiv Corporation
- Powder metallurgy crucible for aluminum nitride crystal growth12 Jun 2008US 2008/0134957 A1Crystal IS, Inc.
- Method and Device for Producting Monocrystals6 Dec 2007US 2007/0277729 A1Centre National De La Recherche Scientifique
- Rotationally-vibrated unidirectional solidification crystal growth system and its method16 Mar 2006US 2006/0054081 A1National Taiwan University
Most cited
By later US patents
- Powder metallurgy tungsten crucible for aluminum nitride crystal growth32US 6,719,843 B2Crystal IS, Inc. · 2004
- Method for growing a semiconductor single-crystal31US 5,858,085 AMitsubishi Materials Corporation · 1999
- Powder metallurgy crucible for aluminum nitride crystal growth29US 7,211,146 B2Crystal IS, Inc. · 2007
- Bar and crucible magnetic suspension for a crystal-growing apparatus25US 5,009,865 AKernforschungsanlage Julich Gesellschaft mit beschrankter Haftung · 1991
- Semiconductor single-crystal growth system21US 5,720,810 AMitsubishi Materials Corporation · 1998