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AssigneeSumco Techxiv Corporation
InventorsYasuhito Narushima, Shinichi Kawazoe, Fukuo Ogawa, Toshimichi Kubota
Estimating the term…
A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt.
A doping device for injecting two types of dopants into a semiconductor melt, the doping device comprising:
A method for manufacturing a silicon monocrystal by growing a crystal after injecting two types of dopants into a semiconductor melt, comprising:
A method for manufacturing a silicon monocrystal by growing a crystal after injecting two types of dopants into a semiconductor melt, comprising:
Dependencies are inferred from the claim text.