Powder metallurgy crucible for aluminum nitride crystal growth
AssigneeCrystal IS, Inc.
InventorsLeo J. Schowalter, Glen A. Slack
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AssigneeCrystal IS, Inc.
InventorsLeo J. Schowalter, Glen A. Slack
Estimating the term…
A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W—Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W—Ta); tungsten (W); and combinations thereof.
-31. (canceled)
A crucible comprising at least one of hafnium or a carbide, and having an elongated wall structure extending in a longitudinal direction, the wall structure
A method for fabricating a crucible, the method comprising fabricating a wall structure from a granular material comprising at least one of hafnium or a carbide, the wall structure defining an interior crystal growth cavity and comprising a plurality of grains forming at least first and second layers, the first layer including a portion of the plurality of grains forming an inside surface of the wall structure and the second layer being superimposed on the first layer.
A method for fabricating an aluminum nitride crystal, the method comprising:
A crucible comprising:
Dependencies are inferred from the claim text.