Doping apparatus for simultaneously injecting two dopants into a semiconductor melt at different positions and method for manufacturing silicon single crystal using the doping apparatus

A doping device for injecting two types of dopants into a semiconductor melt, the doping device comprising:

• a first dopant accommodating portion that is shaped in a cylinder having a bottom, the first dopant accommodating portion including an opening on an upper portion thereof and supporting from below a first dopant that is solid at normal temperature and evaporated near a surface of the semiconductor melt;
• a second dopant accommodating portion that includes a dopant holder that holds a second dopant that is solid at normal temperature and liquefied near the surface of the semiconductor melt, and a communicating hole formed in the dopant holder, and a cover portion that covers the second dopant held by the dopant holder, the second dopant being liquefied by a heat of the semiconductor melt and being injected into the semiconductor melt through the communicating hole;
• and
• a guide that comprises a cylinder body of which a lower end is opened and an upper end is closed, the guide portion being adapted to accommodate both of the first dopant accommodating portion and the second dopant accommodating portion and guiding the first dopant evaporated by the heat of the semiconductor melt into the semiconductor melt at a position different from a position at which the liquefied second dopant is injected into the semiconductor melt through the communicating hole.