US 5,858,085 AGranted

Method for growing a semiconductor single-crystal

AssigneesMitsubishi Materials Corporation, Mitsubishi Materials Silicon Corporation

InventorsYoshiaki Arai, Keisei Abe, Norihisa Machida

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Abstract

A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.

Claims4

Dependent claims

A method for growing a semiconductor single-crystal, comprising the step of:

growing a crystal by pull from a melt while simultaneously flowing argon substantially along the surface of said melt, in a semiconductor single-crystal system comprising:
a double-walled crucible, comprising an inner crucible inside of an outer crucible, with a first hole passing through a lower portion of a sidewall of said inner crucible;
and
at least two members selected from the group consisting of:
(i) an inverted conical flow guide cover, which is placed above and coaxially with said double-walled crucible, the bottom end of said flow-guide cover located above a surface of a starting melt and in a space within said inner crucible;
(ii) a short passage comprising a second hole passing through an upper portion of said sidewall of said inner crucible at a position higher than the level of said surface of the starting melt;
and
(iii) a flow guide cylinder which is placed above and coaxially with said double-walled crucible, with its lower end located above said surface of the starting melt and in a space within said other crucible.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/864,721Filed 28 May 1997 · division
Priority: JP 6-19661722 Aug 1994
Granted: 12 Jan 1999
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

C30B 29/06
Elements: silicon
C30B 15/12
Crucibles or containers for supporting the melt: double crucible methods
C30B 15/14
Single-crystal growth by pulling from a melt, e.g. Czochralski method: heating of the melt or the crystallised materials
Y10T 117/1032
For crystallization from liquid or supercritical state: seed pulling