Y10T 117/1056
Including details of precursor replenishment
Official title: including details of precursor replenishment
Y10T117/1056 (Including details of precursor replenishment) appears on 154 US grants and 86 published applications in this corpus.
Search patents in Y10T- Granted patents
- 154
- Published applications
- 86
- Assignees
- 86
- Inventors
- 302
- Latest grant
- 7 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 6 | 0 |
| 1991 | 4 | 0 |
| 1992 | 4 | 0 |
| 1993 | 3 | 0 |
| 1994 | 7 | 0 |
| 1995 | 3 | 0 |
| 1996 | 5 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 12 | 0 |
| 2000 | 7 | 0 |
| 2001 | 4 | 1 |
| 2002 | 2 | 2 |
| 2003 | 2 | 4 |
| 2004 | 2 | 8 |
| 2005 | 5 | 7 |
| 2006 | 4 | 4 |
| 2007 | 3 | 6 |
| 2008 | 6 | 3 |
| 2009 | 3 | 3 |
| 2010 | 3 | 7 |
| 2011 | 4 | 9 |
| 2012 | 7 | 8 |
| 2013 | 4 | 4 |
| 2014 | 9 | 1 |
| 2015 | 2 | 8 |
| 2016 | 3 | 2 |
| 2017 | 2 | 0 |
| 2018 | 3 | 2 |
| 2019 | 4 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 3 |
| 2023 | 1 | 1 |
| 2024 | 3 | 2 |
| 2025 | 1 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Systems and methods for producing a single crystal silicon ingot using a vaporized dopant7 Apr 2026US 12,595,584 B2GlobalWafers Co., Ltd.
- Systems and methods for producing a single crystal silicon ingot using a vaporized dopant23 Dec 2025US 12,503,790 B2GlobalWafers Co., Ltd.
- Raw material supply unit, and apparatus comprising same for growing single-crystal silicon ingot24 Dec 2024US 12,173,426 B2SK Siltron Co., Ltd.
- Raw material supply unit, single-crystal silicon ingot growing apparatus comprising same and raw material supply method13 Aug 2024US 12,060,649 B2SK Siltron Co., Ltd.
- Crystal growth doping apparatus and crystal growth doping method14 May 2024US 11,982,019 B2GlobalWafers Co., Ltd.
- Systems and methods for producing a single crystal silicon ingot using a vaporized dopant19 Sep 2024US 2024/0309541 A1GlobalWafers Co., Ltd.
- Systems and methods for producing a single crystal silicon ingot using a vaporized dopant8 Feb 2024US 2024/0044041 A1GlobalWafers Co., Ltd.
- Crystal growth doping apparatus and crystal growth doping method9 Feb 2023US 2023/0042128 A1GlobalWafers Co., Ltd.
- Raw material supply unit, single-crystal silicon ingot growing apparatus comprising same and raw material supply method24 Nov 2022US 2022/0372650 A1SK Siltron Co., Ltd.
- Raw material supply unit, and apparatus comprising same for growing single-crystal silicon ingot17 Nov 2022US 2022/0364259 A1SK Siltron Co., Ltd.
Most cited
By later US patents
- Continuous crystal growing furnace62US 4,036,595 ASiltec Corporation · 1977
- Continuous liquid silicon recharging process in Czochralski crucible pulling51US 5,242,531 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1993
- Device and process for pulling high-purity semiconductor rods from a melt46US 4,330,362 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1982
- Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace45US 4,282,184 ASiltec Corporation · 1981
- Continuous liquid silicon recharging process in czochralski crucible pulling35US 5,324,488 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoff mbH · 1994