Crystal growth doping apparatus and crystal growth doping method

A crystal growth doping method configured to be implemented with a doping device that is inserted in a crystal growth furnace along an oblique insertion direction, wherein the crystal growth furnace includes a crucible therein, and the crucible is configured to accommodate a melting raw material, and wherein the doping device includes a feeding tube, a gate tube body that is disposed in the feeding tube, and a storage cover that is detachably disposed in the gate tube body, and the feeding tube extends from an outer surface thereof to form a placement opening, the crystal growth doping method comprising:

• a gate opening step:
• having a door opening member enter the feeding tube from the placement opening and abut against a gate tube opening of the gate tube body, the door opening member pushing the gate tube body along the oblique insertion direction such that the gate tube body is moved away from the placement opening of the feeding tube, and having the door opening member engage with the feeding tube;
• a storage cover removing step:
• having a removal member pass through the placement opening so as to hook a handle of the storage cover onto the removal member, and taking the storage cover outside of the feeding tube from the placement opening along the oblique insertion direction;
• a material storage step:
• placing a dopant in the storage cover;
• a storage cover placement step:
• hooking the handle and placing the storage cover into the feeding tube with the removal member;
• a gate closing step:
• separating the door opening member from the gate tube opening of the gate tube body, so as to move the gate tube body along the oblique insertion direction and isolate an inner space of the feeding tube from the placement opening;
• and
• a doping step:
• moving the feeding tube to allow the storage cover to be adjacent to the melting raw material, so that the dopant is heated and vaporized and enters the melting raw material.