Y10T 117/1052
Including a sectioned crucible [e.g., double crucible, baffle]
Official title: including a sectioned crucible [e.g., double crucible, baffle]
Y10T117/1052 (Including a sectioned crucible [e.g., double crucible, baffle]) appears on 217 US grants and 140 published applications in this corpus.
Search patents in Y10T- Granted patents
- 217
- Published applications
- 140
- Assignees
- 112
- Inventors
- 374
- Latest grant
- 14 Jan 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 10 | 0 |
| 1991 | 7 | 0 |
| 1992 | 8 | 0 |
| 1993 | 5 | 0 |
| 1994 | 9 | 0 |
| 1995 | 7 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 6 | 0 |
| 1999 | 19 | 0 |
| 2000 | 2 | 0 |
| 2001 | 3 | 2 |
| 2002 | 4 | 15 |
| 2003 | 9 | 13 |
| 2004 | 12 | 9 |
| 2005 | 5 | 9 |
| 2006 | 8 | 12 |
| 2007 | 9 | 11 |
| 2008 | 7 | 11 |
| 2009 | 9 | 11 |
| 2010 | 9 | 12 |
| 2011 | 4 | 7 |
| 2012 | 12 | 5 |
| 2013 | 6 | 2 |
| 2014 | 9 | 6 |
| 2015 | 5 | 5 |
| 2016 | 2 | 3 |
| 2017 | 4 | 0 |
| 2018 | 2 | 3 |
| 2019 | 3 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 0 | 2 |
| 2024 | 1 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Crystal pulling systems having a cover member for covering the silicon charge and methods for growing a melt of silicon in a crucible assembly14 Jan 2025US 12,195,873 B2GlobalWafers Co., Ltd.
- Crystal pulling systems having a cover member for covering the silicon charge3 Dec 2024US 12,157,954 B2GlobalWafers Co., Ltd.
- Methods for growing a crystal ingot with reduced dislocations from a crucible22 Oct 2019US 10,450,670 B2Corner Star Limited
- Crystal growing systems and methods including a passive heater23 Jul 2019US 10,358,740 B2Corner Star Limited
- Silicon ingot having uniform multiple dopants and method and apparatus for producing same12 Feb 2019US 10,202,705 B2Gtat IP Holding LLC
- Crystal pulling systems having a cover member for covering the silicon charge18 May 2023US 2023/0151510 A1GlobalWafers Co., Ltd.
- Use of cover members when preparing a melt of silicon in a crucible assembly11 May 2023US 2023/0145430 A1GlobalWafers Co., Ltd.
- Crystal pulling systems having a cover member for covering the silicon charge and methods for growing a melt of silicon in a crucible assembly3 Mar 2022US 2022/0064816 A1GlobalWafers Co., Ltd.
- Single crystal ingots with reduced dislocation defects and methods for producing such ingots9 May 2019US 2019/0136407 A1
- Single crystal ingots with reduced dislocation defects and methods for producing such ingots12 Apr 2018US 2018/0100246 A1Corner Star Limited
Most cited
By later US patents
- High pressure high temperature growth of crystalline group III metal nitrides300US 7,063,741 B2General Electric Company · 2006
- Apparatus for producing single crystal and quasi-single crystal, and associated method95US 7,368,015 B2Momentive Performance Materials Inc. · 2008
- Surface-treated crucibles for improved zero dislocation performance69US 5,976,247 AMEMC Electronic Materials, Inc. · 1999
- Continuous crystal growing furnace62US 4,036,595 ASiltec Corporation · 1977
- Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance58US 6,045,610 ASamsung Electronics Co., Ltd. · 2000