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US 12,157,954 B2Granted
Crystal pulling systems having a cover member for covering the silicon charge
AssigneeGlobalWafers Co., Ltd.
InventorsPaolo Tosi, Matteo Pannocchia, Roberto Scala
Life of this patent
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Abstract
Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.
Claims9
A crystal pulling system for growing a monocrystalline ingot from a silicon melt, the system having a pull axis and comprising:
- a housing defining a growth chamber;
- a crucible assembly disposed within the growth chamber for containing the silicon melt;
- a heat shield that defines a central passage through which an ingot passes during ingot growth;
- and
- a cover member that is moveable within the heat shield along the pull axis, the cover member comprising:
- a first plate having a first plate axis that is parallel to the pull axis, the first plate comprising a hub, the hub having a hub opening;
- a second plate having a second plate axis that is parallel to the pull axis, the second plate being disposed above the first plate, the hub opening extending through the first plate and through the second plate;
- and
- a shaft having a collar and an elongated portion that extends from the collar, the collar being connected to and extending radially outward from the elongated portion, the shaft extending through the hub opening, the first plate resting on the collar.
6 more elements
Dependencies are inferred from the claim text.