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US 2023/0151510 A1Published application
Crystal pulling systems having a cover member for covering the silicon charge
AssigneeGlobalWafers Co., Ltd.
InventorsPaolo Tosi, Matteo Pannocchia, Roberto Scala
Life of this patent
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Abstract
Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.
Claims9
A crystal pulling system for growing a monocrystalline ingot from a silicon melt, the system having a pull axis and comprising:
- a housing defining a growth chamber;
- a crucible assembly disposed within the growth chamber for containing the silicon melt;
- a heat shield that defines a central passage through which an ingot passes during ingot growth;
- and
- a cover member that is moveable within the heat shield along the pull axis, the cover member comprising:
- a first plate having a first plate axis that is parallel to the pull axis;
- and
- a second plate having a second plate axis that is parallel to the pull axis, the second plate being disposed above the first plate.
5 more elements
Dependencies are inferred from the claim text.