Y10S 977/817
High-indium-content ingan pooling or clusters
Official title: High-indium-content InGaN pooling or clusters
Y10S977/817 (High-indium-content ingan pooling or clusters) appears on 11 US grants and 12 published applications in this corpus.
Search patents in Y10S- Granted patents
- 11
- Published applications
- 12
- Assignees
- 10
- Inventors
- 24
- Latest grant
- 17 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 3 |
| 2007 | 0 | 0 |
| 2008 | 1 | 2 |
| 2009 | 2 | 3 |
| 2010 | 2 | 0 |
| 2011 | 4 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
By publication year.
Recent patents
- Quantum dot17 Oct 2023US 11,788,004 B2Stanley Electric Co., Ltd.
- Method for manufacturing quantum dot27 Apr 2021US 10,988,688 B2Stanley Electric Co., Ltd.
- Indium-based nanowire product, oxide nanowire product, and electroconductive oxide nanowire product, as well as production methods thereof25 Oct 2011US 8,043,409 B2Sumitomo Metal Mining Co., Ltd.
- Water-stable III-V semiconductor nanocrystal complexes and methods of making same23 Aug 2011US 8,003,010 B2Samsung Electronics Co., Ltd.
- Hybrid nanocomposite semiconductor material, and method of producing inorganic semiconductor therefor1 Mar 2011US 7,897,417 B2National Research Council of Canada
- Quantum dot8 Jul 2021US 2021/0207025 A1Stanley Electric Co., Ltd.
- Method for manufacturing quantum dot and quantum dot14 Dec 2017US 2017/0355903 A1Stanley Electric Co., Ltd.
- Water stable iii-v semiconductor nanocrystal complexes and methods of making same28 Jun 2012US 2012/0161101 A1Samsung Electronics Co., Ltd.
- Methods of Manufacture for Quantum Dot optoelectronic devices with nanoscale epitaxial lateral overgrowth29 Oct 2009US 2009/0269868 A1Dot Metric Technology, Inc.
- Hybrid nanocomposite semiconductor material, and method of producing inorganic semiconductor therefor13 Aug 2009US 2009/0203195 A1National Research Council of Canada
Most cited
By later US patents
- III-V semiconductor nanocrystal complexes and methods of making same89US 7,399,429 B2Evident Technologies · 2008
- Semiconductor nanocrystal complexes comprising a metal coating and methods of making same78US 7,482,059 B2Evident Technologies · 2009
- Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture19US 7,554,109 B2Dot Metrics Technology, Inc. · 2009
- Nanowire-templated lateral epitaxial growth of non-polar group III nitrides14US 7,670,933 B1Sandia Corporation · 2010
- Water-stable III-V semiconductor nanocrystal complexes and methods of making same11US 8,003,010 B2Samsung Electronics Co., Ltd. · 2011