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US 2017/0355903 A1Published application
Method for manufacturing quantum dot and quantum dot
AssigneeStanley Electric Co., Ltd.
InventorsTakuya KAZAMA, Wataru TAMURA, Yasuyuki MIYAKE
Life of this patent
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Abstract
A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.
Claims20
A quantum dot manufacturing method comprising:
- (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed;
- and
- (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.
A quantum dot comprising:
- a nano-seed particle made of group II-VI semiconductor material containing Zn or Mg as group II element, the nano-seed particle having a particular crystal plane exposed;
- and
- a first epitaxial layer formed on the crystal plane of the nano-seed particle and made of Inx(AlmGan)1-xN (0.15≦x≦1.0, m+n=1.0).
A quantum dot comprising:
- a flat-plate-shaped core layer made of Inx(AlmGan)1-xN (0.15≦x≦1.0, m+n=1.0);
- and
- a shell layer covering the core layer, and made of Iny(AlpGaq)1-yN (0.15≦y≦1.0, p+q=1.0) and has different composition from the core layer.
A quantum dot comprising:
- a flat-plate-shaped first semiconductor layer, a flat-plate-shaped second semiconductor layer stacked on the first semiconductor layer, and a flat-plate-shaped third semiconductor layer stacked on the second semiconductor layer,
- wherein each of the first to third semiconductor layers has a thickness at which quantum confinement effect occurs, and
- the first to third semiconductor layers constitute a first flat multilayer structure capable of emitting light of a first wavelength.
Dependencies are inferred from the claim text.