Nanowire-templated lateral epitaxial growth of non-polar group III nitrides
AssigneeSandia Corporation
InventorsGeorge T. Wang, Qiming Li, J. Randall Creighton
Life of this patent
Estimating the term…
Abstract
A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
Claims11
A method for nanowire-templated lateral epitaxial growth of nonpolar Group III nitrides, comprising:
- forming a plurality of metal catalyst nanoclusters on a surface of a crystallographic template substrate;
- growing by a metal-organic chemical vapor growth technique a plurality of single-crystal Group III nitride nanowires that are substantially vertically oriented relative to the surface using the plurality of metal catalyst nanoclusters to catalyze nanowire growth under nanowire growth conditions, wherein the single-crystal Group III nitride nanowires are crystallographically aligned with the crystallographic template substrate;
- and
- growing by a metal-organic chemical vapor growth technique a Group III nitride material laterally from the single-crystal Group III nitride nanowires under lateral growth conditions to form a coalesced Group III nitride layer.
Dependencies are inferred from the claim text.