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US 7,897,417 B2Granted
Hybrid nanocomposite semiconductor material, and method of producing inorganic semiconductor therefor
AssigneeNational Research Council of Canada
InventorsFarid Bensebaa, Pascal L'Ecuyer, Jianfu Ding, Andrea Firth
Life of this patent
Estimating the term…
Abstract
Hybrid semiconductor materials have an inorganic semiconductor incorporated into a hole-conductive fluorene copolymer film. Nanometer-sized particles of the inorganic semiconductor may be prepared by mixing inorganic semiconductor precursors with a steric-hindering coordinating solvent and heating the mixture with microwaves to a temperature below the boiling point of the solvent.
Claims19
Process for preparing nanometer-sized particles of an inorganic semiconductor comprises:
- mixing inorganic semiconductor precursors with a steric-hindering coordinating solvent, the solvent having a boiling point;
- and heating the mixture with microwaves to a temperature below the boiling point of the solvent.
Dependencies are inferred from the claim text.