Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture

A quantum dot optoelectronic device, comprising:

• a first layer of a first conductivity having a pitted surface on an upper surface of the first layer, the pitted surface having a plurality of pit openings;
• a plurality of quantum dots directly on the pitted surface of the first layer such that the quantum dots are in corresponding pit openings and that other portions of the upper surface of the first layer remain uncovered by plurality of quantum dots, sizes of the pit openings and the quantum dots being selected such that the pit openings trap the quantum dots, dislocations extending down through the first layer below the quantum dots;
• and
• a second layer of a second conductivity that is different from the first conductivity disposed directly on the quantum dots and on the other portions of the upper surface of the first layer.

A quantum dot optoelectronic device, comprising:

• a first layer of a first conductivity, an upper surface of the first layer including openings on dislocations in the first layer:
• a quantum dot layer directly on only a portion of the upper surface of the first layer such that quantum dots are in the openings and that other portions of the upper surface of the first layer remain uncovered by the quantum dot layer, sizes of the openings and the quantum dots being selected such that the openings trap the quantum dots, the dislocations extending down through the first layer below the quantum dots:
• and
• a second layer of a second conductivity that is different from the first conductivity directly on the quantum dot layer and on the other portions of the upper surface the first layer,
• wherein:
• the quantum dots are present as individual quantum dots or clusters of quantum dots, and
• the quantum dots or clusters of quantum dots have a size ranging from 1 nm to greater than 1 micrometer.

A quantum dot optoelectronic device, comprising:

• a first layer of a first conductivity having a pitted surface;
• a plurality of quantum dots directly on the pitted surface of the first layer such that the quantum dots are in pits in the pitted surface of the first layer, sizes of the pits and the quantum dots being selected such that the pits trap the quantum dots, the quantum dot layer including a quantum dot multilayer, each layer of the multilayer having a pattern such that the patterns alternate;
• and
• a second layer of a second conductivity that is different from the first conductivity disposed directly on the quantum dots and on the first layer other than the pits.