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US 10,988,688 B2Granted
Method for manufacturing quantum dot
AssigneeStanley Electric Co., Ltd.
InventorsTakuya Kazama, Wataru Tamura, Yasuyuki Miyake
Life of this patent
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Abstract
A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.
Claims15
A quantum dot manufacturing method comprising:
- (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed;
- and
- (b) growing flat-plate-shaped first nitride semiconductor layers epitaxially on the exposed crystal planes of the nano-seed particles in the solvent, the first nitride semiconductor layers being made of Inx(AlmGan)1-xN (0.15≤x≤1.0, m+n=1.0).
Dependencies are inferred from the claim text.