Y10S 438/935
Gas flow control
Y10S438/935 (Gas flow control) appears on 254 US grants and 66 published applications in this corpus.
Search patents in Y10S- Granted patents
- 254
- Published applications
- 66
- Assignees
- 101
- Inventors
- 400
- Latest grant
- 4 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 4 | 0 |
| 1983 | 3 | 0 |
| 1984 | 2 | 0 |
| 1985 | 8 | 0 |
| 1986 | 4 | 0 |
| 1987 | 6 | 0 |
| 1988 | 9 | 0 |
| 1989 | 7 | 0 |
| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 4 | 0 |
| 1993 | 12 | 0 |
| 1994 | 12 | 0 |
| 1995 | 18 | 0 |
| 1996 | 14 | 0 |
| 1997 | 18 | 0 |
| 1998 | 8 | 0 |
| 1999 | 13 | 0 |
| 2000 | 13 | 0 |
| 2001 | 8 | 5 |
| 2002 | 4 | 13 |
| 2003 | 17 | 13 |
| 2004 | 9 | 8 |
| 2005 | 11 | 9 |
| 2006 | 9 | 2 |
| 2007 | 3 | 9 |
| 2008 | 3 | 4 |
| 2009 | 6 | 0 |
| 2010 | 3 | 1 |
| 2011 | 3 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 2 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Gas flow control during semiconductor fabrication4 Nov 2025US 12,463,065 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Insitu post atomic layer deposition destruction of active species4 Sep 2012US 8,257,497 B2Micron Technology, Inc.
- Processing method for recovering a damaged low-k film of a substrate and storage medium1 Nov 2011US 8,048,687 B2Tokyo Electron Limited
- Method of making silicon solar cells containing μC silicon layers19 Apr 2011US 7,927,907 B2Forschungszentrum Julich GmbH
- Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto22 Mar 2011US 7,910,494 B2Tokyo Electron Limited
- Gas flow control during semiconductor fabrication24 Nov 2022US 2022/0375770 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gas flow control during semiconductor fabrication17 Feb 2022US 2022/0051912 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Processing method and storage medium2 Dec 2010US 2010/0304505 A1Tokyo Electron Limited
- Method of Making Silicon Solar Cells Containing μC Silicon Layers6 Nov 2008US 2008/0274582 A1Forschungszentrum Julich GmbH
- Method for flexing a substrate during processing18 Sep 2008US 2008/0224364 A1Tokyo Electron Limited
Most cited
By later US patents
- Method for producing compound thin films1,267US 4,058,430 A1977
- Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps552US 5,873,942 ASamsung Electronics Co., Ltd. · 1999
- Method for producing an electronic device having a multi-layer structure496US 4,771,015 ACanon Kabushiki Kaisha · 1988
- Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment490US 5,273,609 ATexas Instruments Incorporated · 1993
- Plasma density controller for semiconductor device processing equipment484US 5,082,517 ATexas Instruments Incorporated · 1992