Gas flow control during semiconductor fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Liang Yeh, Chih-Kang Chao, Bing Kai Huang
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Abstract
A method is provided. The method includes introducing a process gas into an interior space of a processing chamber through a gas inlet port, wherein a substrate is supported within the interior space. The process gas is evacuated from the interior space by a vacuum source through an exhaust port in fluid communication with the interior space of the process chamber. A flow of the process gas is controlled by supporting an exhaust baffle within a flow path of the process gas being evacuated from the interior space through the exhaust port.
Claims20
A method comprising:
- introducing a process gas into an interior space of a process chamber through a gas inlet port, wherein a substrate is supported within the interior space;
- evacuating the process gas from the interior space by a vacuum source through an exhaust port in fluid communication with the interior space of the process chamber;
- and
- controlling a flow of the process gas established by evacuating the process gas with the vacuum source by supporting an exhaust baffle within a flow path of the process gas being evacuated from the interior space through the exhaust port, wherein controlling the flow of the process gas comprises:
- controlling a seal member to overlap a portion of the exhaust port to define a crescent shaped aperture.
A method comprising:
- evacuating a process gas from an interior space of a process chamber through an exhaust port;
- controlling a seal member to overlap a portion of the exhaust port to define a crescent shaped aperture;
- and
- controlling a flow of the process gas established by evacuating the process gas by arranging an exhaust baffle overlying the seal member and comprising a plurality of vent apertures within a flow path of the process gas being evacuated from the interior space through the exhaust port.
A method comprising:
- introducing a process gas into an interior space of a process chamber through a gas inlet port, wherein a substrate is supported within the interior space;
- evacuating the process gas from the interior space of the process chamber by a vacuum source through an exhaust port in fluid communication with the interior space of the process chamber;
- and
- controlling a flow of the process gas established by evacuating the process gas with the vacuum source by supporting an exhaust baffle within a flow path of the process gas being evacuated from the interior space through the exhaust port, wherein:
- the exhaust baffle is annular, and
- controlling the flow of the process gas comprises:
- controlling a seal member to overlap a portion of the exhaust port to define a crescent shaped aperture;
- and
- pulling the process gas through a first vent aperture defined by the exhaust baffle and having a longest dimension extending in a first direction different than a radial direction of the exhaust baffle.
Dependencies are inferred from the claim text.