Y10S 117/912
Replenishing liquid precursor, other than a moving zone
Y10S117/912 (Replenishing liquid precursor, other than a moving zone) appears on 23 US grants and 4 published applications in this corpus.
Search patents in Y10S- Granted patents
- 23
- Published applications
- 4
- Assignees
- 21
- Inventors
- 58
- Latest grant
- 15 Apr 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 2 |
| 2010 | 0 | 1 |
| 2011 | 1 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for feeding arsenic dopant into a silicon crystal growing apparatus15 Apr 2014US 8,696,811 B2MEMC Electronic Materials, Inc.
- One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection20 Mar 2012US 8,137,457 B2University of Florida Research Foundation, Inc.
- Method and device for feeding arsenic dopant into a silicon crystal growing apparatus12 Apr 2011US 7,922,817 B2MEMC Electronic Materials, Inc.
- Method for manufacturing silicon carbide single crystal from dislocation control seed crystal14 Nov 2006US 7,135,074 B2Denso Corporation
- Method of feeding dopant for continuously-charged method and a dopant composition2 Feb 1999US 5,866,094 AKomatsu Electronic Metals Co., Ltd.
- Method for feeding arsenic dopant into a silicon crystal growing apparatus3 Jun 2010US 2010/0132829 A1MEMC Electronic Materials, Inc.
- Method and device for feeding arsenic dopant into a silicon crystal growing apparatus29 Oct 2009US 2009/0266294 A1MEMC Electronic Materials, Inc.
- One-Pot Synthesis of High-Quality Metal Chalcogenide Nanocrystals Without Precursor Injection2 Apr 2009US 2009/0084307 A1University of Florida Research Foundation, Inc.
- Method for manufacturing silicon carbide single crystal from dislocation control seed crystal29 Sep 2005US 2005/0211156 A1Denso Corporation
Most cited
By later US patents
- Polysilicon produced by a fluid bed process30US 4,820,587 AEthyl Corporation · 1989
- Method and apparatus for production of liquid phase epitaxial layers of semiconductors22US 3,933,538 ASumitomo Electric Industries, Ltd. · 1976
- Crystal growth of compound semiconductor mixed crystals under controlled vapor pressure18US 4,315,796 AZaidan Hojin Handotai Kenkyu Shinkokai · 1982
- Method and apparatus for manufacturing silicon single crystals18US 5,087,429 ANKK Corporation · 1992
- Apparatus for growing crystals16US 5,080,873 AMitsubishi Materials Corporation · 1992