Method for manufacturing silicon carbide single crystal from dislocation control seed crystal

A method for manufacturing a silicon carbide single crystal, the method comprising the steps of:

• preparing a dislocation control seed crystal including a screw dislocation generation region for generating a screw dislocation in the silicon carbide single crystal;
• and
• growing the silicon carbide single crystal on a growth surface of the dislocation control seed crystal,
• wherein the screw dislocation generation region occupies equal to or smaller than 50% of the growth surface of the dislocation control seed crystal,
• wherein the growth surface has an offset angle equal to or smaller than 60 degrees measured from a {0001} surface of the dislocation control seed crystal,
• wherein the screw dislocation in the silicon carbide single crystal generated from the screw dislocation generation region has a density higher than a density of the screw dislocation in the other region of the silicon carbide single crystal,
• wherein, in the step of growing the silicon carbide single crystal, the silicon carbide single crystal includes a flat C-surface facet disposed on a growing surface of the silicon carbide single crystal, and
• wherein the C-surface facet overlaps at least one of parts of the growing surface provided by projecting the screw dislocation generation region in a direction perpendicular to the growth surface and in a direction parallel to a <0001> axis of the dislocation control seed crystal, respectively.