Apparatus for growing crystals

An apparatus for melting a crystalline material and growing a single-crystal from the molten material, comprising;

• a crucible for melting the crystalline material;
• a downwardly inclined feed pipe for causing the crystalline material to fall into said crucible to charge said crucible with the crystalline material, said feed pipe having a lower end positioned slightly above the surface of said molten material in said crucible, said lower end being aligned with a direction of rotation of said crucible, said feed pipe having a quadrilateral cross-section comprising four wall plates, said feed pipe being made of a material selected from the group consisting of quartz and SiO.sub.2 coated molybdenum;
• a plurality of baffle plates each mounted to said feed pipe so as to extent into a flow path therethrough, said plurality of baffle plates being provided along a portion of the length of the feed pipe from a point upstream of said lower end to a point adjacent said lower end and including:
• first baffle plates each mounted to and extending from an inner surface of one of said wall plates;
• and
• second baffle plates mounted to and extending from an inner wall of another wall plate which is defined in opposed, facing relation to said one wall plate, said first baffles and said second baffles alternating extending towards the longitudinal axis of said feed pipe, said first baffle plates and said second baffle plates being mounted to said respective walls such that a spacing between adjacent baffle plates is greatest at an upstream end of said plurality of baffle plates and is least adjacent said lower end of said feed pipe and gradually decreases from said upstream end to said downstream end, each of said first baffle plates and second baffle plates being inclined with respect to said longitudinal axis of said feed pipe so as to extend in a downstream direction of said feed pipe;
• and
• pulling means for pulling the single-crystal from the molten material in said crucible.