Method and apparatus for manufacturing silicon single crystals

In an apparatus for manufacturing a single silicon crystal which comprises means for continuously feeding silicon starting materials, means for melting silicon materials in a crucible and means for pulling up a single silicon crystal and in which the inside of the crucible, containing the molten silicon and rotating at a constant speed, is divided into the raw materials feeding section and the single silicon crystal growing section by a cylindrical partition fixed at its lower end to the bottom of said crucible and having a plurality of small openings at its lower portion for allowing said molten silicon in said raw material melting section to flow slowly therethrough to said single silicon crystal growing section in one direction,

• the improvement which comprises setting the contact area between the molten silicon and the inner wall of the crucible in the raw material feeding section to 30 to 75% of the total contact area between the molten silicon and the crucible as a whole and the full surface area of the molten silicon in the raw materials feeding section is set to 10 to 70% of the free surface area of the molten silicon, and arranging and electric resistance side heater around said crucible for melting the silicon material and a heat keeping board for covering the upper part of said partition and the raw materials feeding section.