H10K 10/86
Schottky electrodes
H10K10/86 (Schottky electrodes) appears on 11 US grants and 10 published applications in this corpus.
Search patents in H10K- Granted patents
- 11
- Published applications
- 10
- Assignees
- 4
- Inventors
- 26
- Latest grant
- 1 Mar 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 1 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 3 | 2 |
| 2017 | 1 | 0 |
| 2018 | 0 | 5 |
| 2019 | 4 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 1 | 0 |
By publication year.
Recent patents
- Thin film transistor1 Mar 2022US 11,264,516 B2Hon Hai Precision Industry Co., Ltd.
- Carbon nanotube array17 Sep 2019US 10,418,557 B2Hon Hai Precision Industry Co., Ltd.
- Thin film transistor13 Aug 2019US 10,381,585 B2Hon Hai Precision Industry Co., Ltd.
- Thin film transistor6 Aug 2019US 10,374,180 B2Hon Hai Precision Industry Co., Ltd.
- Memristive device based on tunable schottky barrier28 May 2019US 10,305,054 B2International Business Machines Corporation
- Carbon nanotube array22 Nov 2018US 2018/0337338 A1Hon Hai Precision Industry Co., Ltd.
- Memristive Device Based on Tunable Schottky Barrier25 Oct 2018US 2018/0309075 A1International Business Machines Corporation
- Thin film transistor26 Jul 2018US 2018/0212068 A1Hon Hai Precision Industry Co., Ltd.
- Thin film transistor26 Jul 2018US 2018/0212173 A1Hon Hai Precision Industry Co., Ltd.
- Thin film transistor26 Jul 2018US 2018/0212174 A1Hon Hai Precision Industry Co., Ltd.
Most cited
By later US patents
- Nanotube enabled, gate-voltage controlled light emitting diodes18US 8,232,561 B2University of Florida Research Foundation, Inc. · 2012
- Contact barrier modulation of field effect transistors3US 8,564,048 B2University of Florida Research Foundation, Inc. · 2013
- Semiconductor device with programmable response2US 9,379,340 B1International Business Machines Corporation · 2016
- Semi-conductor device with programmable response2US 9,379,342 B1International Business Machines Corporation · 2016
- Ambipolar vertical field effect transistor2US 9,601,707 B2University of Florida Research Foundation, Inc. · 2017