Memristive device based on tunable schottky barrier

A method of forming a memristive device, the method comprising the steps of:

• forming a semiconductor layer on a bottom metal electrode;
• depositing workfunction-modifying molecules onto the semiconductor layer;
• and
• forming a top metal electrode on the semiconductor layer, wherein the top metal electrode forms a Schottky junction with the semiconductor layer, and wherein the workfunction-modifying molecules are configured to alter a workfunction of the top metal electrode, wherein the method further comprises the steps of:
• depositing the workfunction-modifying molecules directly onto the semiconductor layer so as to form a monolayer of the workfunction-modifying molecules on the semiconductor layer;
• and
• forming the top metal electrode on the semiconductor layer covering the monolayer of the workfunction-modifying molecules.

A memristive device, comprising:

• a bottom metal electrode;
• a semiconductor layer on the bottom metal electrode;
• a top metal electrode on the semiconductor layer, wherein the top metal electrode forms a Schottky junction with the semiconductor layer;
• and
• workfunction-modifying molecules at an interface between the semiconductor layer and the top metal electrode, wherein the workfunction-modifying molecules are configured to alter a workfunction of the top metal electrode.