Thin film transistor

A thin film transistor, comprising:

• a gate electrode, an insulating medium layer and at least one Schottky diode unit, wherein the insulating medium layer is located on the gate electrode, the at least one Schottky diode unit is located on a surface of the insulating medium layer and insulated from the gate electrode via the insulating medium layer, and the at least one Schottky diode unit comprises:
• a first electrode located on the surface of the insulating medium layer, wherein the surface of the insulating medium layer comprises a groove structure, the first electrode is located in the groove structure, and an upper surface of the first electrode is flush with the surface of the insulating medium layer;
• a semiconductor structure comprising a first end and a second end opposite to the first end, wherein the first end is laid on the first electrode, the first electrode is located between the first end of the semiconductor structure and the surface of the insulating medium layer, the second end of the semiconductor structure is located on the surface of the insulating medium layer, and an entirety of the semiconductor structure is a single-walled carbon nanotube or a carbon nanotubes film consisting of a plurality of carbon nanotubes;
• and
• a second electrode located on the second end of the semiconductor structure, wherein the second end of the semiconductor structure is located between the second electrode and the surface of the insulating medium layer, and the second end of the semiconductor structure is directly and physically in contact with the second electrode;
• and
• the at least one Schottky diode unit is an asymmetric structure.