Thin film transistor

A thin film transistor comprising:

• a gate electrode, an insulating medium layer and at least one Schottky diode unit, wherein the insulating medium layer is located on the gate electrode, the at least one Schottky diode unit is located on a surface of the insulating medium layer and insulated from the gate electrode via the insulating medium layer, each of the at least one Schottky diode unit comprises:
• a first electrode located on the surface of the insulating medium layer;
• a semiconductor structure comprising a first end and a second end opposite with the first end, the first end is laid on the first electrode, and the first electrode is located between the first end of the semiconductor structure and the surface of the insulating medium layer, the second end of the semiconducting structure is located on the surface of the insulating medium layer, the semiconducting structure is a carbon nanotube structure;
• and
• a second electrode located on the second end of the semiconducting structure, and the second end of the semiconducting structure is located between the second electrode and the surface of the insulating medium layer.