Thin film transistor
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYu-Dan Zhao, Xiao-Yang Xiao, Ying-Cheng Wang, Yuan-Hao Jin, Tian-Fu Zhang, Qun-Qing Li
Life of this patent
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Abstract
A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.
Claims13
A thin film transistor comprising:
- a gate electrode, an insulating medium layer and at least one Schottky diode unit, wherein the insulating medium layer is located on the gate electrode, the at least one Schottky diode unit is located on a surface of the insulating medium layer and insulated from the gate electrode via the insulating medium layer, each of the at least one Schottky diode unit comprises:
- a first electrode located on the surface of the insulating medium layer;
- a semiconductor comprising, a first end and a second end opposite with the first end, the first end is laid on the first electrode, and the first electrode is located between the first end of the semiconductor and the surface of the insulating medium layer, the second end of the semiconductor is located on the surface of the insulating medium layer;
- a second electrode located on the second end of the semiconductor, wherein the second end of the semiconductor is located between the second electrode and the surface of the insulating medium layer, and the second end of the semiconductor is in direct contact with the second electrode;
- and
- the first electrode, the second electrode and the semiconductor forming an asymmetric structure, wherein an entirely of the first electrode is located below the semiconductor, an entirely of the second electrode is located above the semiconductor;
- and wherein the semiconductor is a carbon nanotube.
Dependencies are inferred from the claim text.