H10F 39/196
Junction field effect transistor [jfet] image sensors
Official title: {Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors}
H10F39/196 (Junction field effect transistor [jfet] image sensors) appears on 156 US grants and 93 published applications in this corpus.
Search patents in H10F- Granted patents
- 156
- Published applications
- 93
- Assignees
- 63
- Inventors
- 216
- Latest grant
- 17 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 7 | 0 |
| 1985 | 9 | 0 |
| 1986 | 9 | 0 |
| 1987 | 15 | 0 |
| 1988 | 5 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 3 |
| 2003 | 1 | 1 |
| 2004 | 3 | 2 |
| 2005 | 1 | 1 |
| 2006 | 2 | 3 |
| 2007 | 3 | 9 |
| 2008 | 3 | 6 |
| 2009 | 5 | 2 |
| 2010 | 3 | 4 |
| 2011 | 2 | 1 |
| 2012 | 2 | 6 |
| 2013 | 6 | 3 |
| 2014 | 7 | 6 |
| 2015 | 6 | 9 |
| 2016 | 9 | 6 |
| 2017 | 7 | 1 |
| 2018 | 5 | 5 |
| 2019 | 2 | 2 |
| 2020 | 3 | 6 |
| 2021 | 1 | 8 |
| 2022 | 4 | 4 |
| 2023 | 8 | 2 |
| 2024 | 3 | 2 |
| 2025 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Unit pixel of image sensor and light-receiving element thereof17 Jun 2025US 12,336,309 B2
- Retinal prostheses4 Mar 2025US 12,239,834 B2Nanovision Biosciences, Inc.
- Imaging device31 Dec 2024US 12,183,756 B2Sony Semiconductor Solutions Corporation
- Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof19 Nov 2024US 12,148,853 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Opto-electronic device and image sensor including the same2 Jan 2024US 11,862,743 B2Samsung Electronics Co., Ltd.
- Unit pixel of image sensor and light-receiving element thereof4 Sep 2025US 2025/0280610 A1
- Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof21 Nov 2024US 2024/0387766 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof28 Mar 2024US 2024/0105877 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof25 May 2023US 2023/0163231 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Unit pixel of image sensor and light-receiving element thereof18 May 2023US 2023/0155052 A1
Most cited
By later US patents
- Solid-state image sensor with exposure controller229US 4,471,228 AFuji Photo Film Co., Ltd. · 1984
- Solid-state imaging device and method of detecting optical signals using the same91US 6,051,857 AInnovision, Inc. · 2000
- Solid-state imaging device78US 6,046,466 ANikon Corporation · 2000
- Semiconductor device77US 6,720,589 B1Kabushiki Kaisha Toshiba · 2004
- CMOS-compatible active pixel image array using vertical pnp cell67US 5,705,846 ANational Semiconductor Corporation · 1998