Solid-state imaging device
AssigneeNikon Corporation
InventorsTomohisa Ishida, Naoki Ohkouchi, Satoshi Suzuki, Masahiro Juen, Tadao Isogai
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AssigneeNikon Corporation
InventorsTomohisa Ishida, Naoki Ohkouchi, Satoshi Suzuki, Masahiro Juen, Tadao Isogai
Estimating the term…
A photoelectric conversion device suitable for use as an element of a photodetector array includes a photodiode for generating a first signal charge in response to incident light, an output unit including a JFET, and at least one transistor having an electrode that generates a second signal charge in response to incident light. The first and second signal charges may be output separately or combined. The second signal charge, or the first and second signal charges combined, may be monitored during an exposure time to determine the desired end of the exposure. An image sensor array may have one or more pixels with such light monitoring capability. The output signal for monitoring the light may be output over a reset drain interconnection, directly from the monitoring pixel or through other pixels via inter-pixel MOSFETS. Exposure time may be controlled, by timing a shutter or a strobe or the like, based on the monitored accumulation of signal charge during exposure. Microlenses may be provided on-chip to increase the effective aperture ratio of the array. The microlenses are designed to avoid interfering with the incident light used for monitoring. Resulting pixel-to-pixel variations in effective aperture ratio, if any, may be electronically compensated.
A photoelectric conversion device comprising:
A photoelectric conversion device comprising:
A photoelectric conversion device comprising:
A photoelectric conversion device comprising:
A photoelectric conversion device comprising:
A photoelectric conversion device comprising:
A light receiving device useful as a pixel element in a photodetector array, the device comprising:
An image sensor array comprising a regular array of pixel elements formed on a single semiconductor substrate, the array of pixel elements including at least one first pixel element, said at least one first pixel element comprising at least first and second photosensitive areas, said at least first and second photosensitive areas of said at least one first pixel element each being capable of providing an output signal in response to incident light, the value of any one said output signal being independent of any other said output signal.
A fixed-image image capture apparatus comprising an (1) image sensor array for capturing an image formed, for an exposure time, on the image sensor array, and (2) a light-control device;
A photoelectric conversion device comprising a photoelectric conversion element structured and arranged so as to be able to generate a signal charge in response to incident light, an amplification transistor for amplifying the signal charge from the photoelectric conversion element;
Dependencies are inferred from the claim text.